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High performance SRAMs IN 1.5 V, 0.18μm partially depleted SOI technologyJOSHI, R. V; PELLELA, A; WAGNER, O et al.2002 symposium on VLSI circuits. 2002, pp 74-77, isbn 0-7803-7310-3, 4 p.Conference Paper

Adhesion enhancement of Cr/polyimide interfaces using RF pre-sputtering of polyimide surfacesOH, T. S; KOWALCZYK, S. P; HUNT, D. J et al.Journal of adhesion science and technology. 1990, Vol 4, Num 2, pp 119-129, issn 0169-4243Article

Surface modification of BPDA-PDA polyimideLEE, K.-W; KOWALCZYK, S. P; SHAW, J. M et al.Langmuir. 1991, Vol 7, Num 11, pp 2450-2453, issn 0743-7463Article

Molecular-beam-epitaxy GaAs regrowth with clean interfaces by arsenic passivationMILLER, D. L; CHEN, R. T; ELLIOTT, K et al.Journal of applied physics. 1985, Vol 57, Num 6, pp 1922-1927, issn 0021-8979Article

Hydrothermal stability of Cr/polyimide interfacesKIM, D. G; MOLIS, S. E; OH, T. S et al.Journal of adhesion science and technology. 1991, Vol 5, Num 7, pp 509-521, issn 0169-4243, 13 p.Article

Photoelectron spectroscopy studies of chemical vapor deposition of Ta from a TaF5 precursor on Si and SiO2 subtratesUGOLINI, D; KOWALCZYK, S. P; MCFEELY, F. R et al.Journal of applied physics. 1991, Vol 70, Num 7, pp 3899-3906, issn 0021-8979Article

Pthalimide on copper: a model system to address certain site-specific interactions at the polyimide-copper interfaceSALANECK, W. R; STAFSTROM, S; BREDAS, J.-L et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1988, Vol 6, Num 6, pp 3134-3139, issn 0734-2101Article

CdTe-HgTe (111) heterojunction valence-band discontinuity: a common-anion-rule contradictionKOWALCZYK, S. P; CHEUNG, J. T; KRAUT, E. A et al.Physical review letters. 1986, Vol 56, Num 15, pp 1605-1608, issn 0031-9007Article

Growth of ODPA-APB polyimide films using molecular beam deposition, and their characterizationDIMITRAKOPOULOS, C. D; KOWALCZYK, S. P; KANG-WOOK LEE et al.Polymer (Guildford). 1995, Vol 36, Num 26, pp 4983-4990, issn 0032-3861Article

Low-temperature selective-area deposition of metals : chemical vapor deposition of gold from ethyl(trimethylphosphine)gold(I)BANASZAK HOLL, M. M; SEIDLER, P. F; KOWALCZYK, S. P et al.Applied physics letters. 1993, Vol 62, Num 13, pp 1475-1477, issn 0003-6951Article

Photochemical etching during ultraviolet photolytic deposition of metal films on semiconductor surfaces = Attaque photochimique pendant le dépôt photolytique en ultraviolet de couches minces métalliques sur des surfaces de semiconducteursKOWALCZYK, S. P; MILLER, D. L.Journal of applied physics. 1986, Vol 59, Num 1, pp 287-289, issn 0021-8979Article

Valence- and conduction-band structure of the sapphire (1102) surfaceGIGNAC, W. J; WILLIAMS, R. S; KOWALCZYK, S. P et al.Physical review. B, Condensed matter. 1985, Vol 32, Num 2, pp 1237-1247, issn 0163-1829Article

Semiconductor core-level to valence-band maximum binding-energy differences: precise determination by X-ray photoelectron spectroscopyKRAUT, E. A; GRANT, R. W; WALDROP, J. R et al.Physical review. B, Condensed matter. 1983, Vol 28, Num 4, pp 1965-1977, issn 0163-1829Article

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